IGBT Chip
SKW25N120FKSA1
Trans IGBT Chip N-CH 1200V 46A 313W 3-Pin(3+Tab) TO-247 Tube
Infineon Technologies AGProduct Technical Specifications
RoHS (Unione Europea)
Compliant
ECCN (Stati Uniti)
EAR99
Stato del componente
Obsolete
Codice HTS
SKW25N120FKSA1
Automotive
No
PPAP
No
Channel Type
N
Configuration
Single
Maximum Collector-Emitter Voltage (V)
1200
Maximum Gate Emitter Voltage (V)
±20
Typical Collector Emitter Saturation Voltage (V)
3.1
Maximum Continuous Collector Current (A)
46
Maximum Gate Emitter Leakage Current (uA)
0.1
Maximum Power Dissipation (W)
313
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Through Hole
Package Height
21.1(Max)
Package Width
5.16(Max)
Package Length
16.03(Max)
PCB changed
3
Tab
Tab
Standard Package Name
TO-247
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole
Family/Series
SKW25N120
ALIAS
SP000012571
Quantity Packaging
240
ROHS Version
2011/65/EU, 2015/863
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