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SKW25N120FKSA1|INFINEON|simage
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Puce IGBT

SKW25N120FKSA1

Trans IGBT Chip N-CH 1200V 46A 313W 3-Pin(3+Tab) TO-247 Tube

Infineon Technologies AG
Fiches techniques 

Spécifications techniques du produit
  • RoHS (Unione Europea)
    Compliant
  • ECCN (Stati Uniti)
    EAR99
  • Stato del componente
    Obsolete
  • Codice HTS
    SKW25N120FKSA1
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Configuration
    Single
  • Maximum Collector-Emitter Voltage (V)
    1200
  • Maximum Gate Emitter Voltage (V)
    ±20
  • Typical Collector Emitter Saturation Voltage (V)
    3.1
  • Maximum Continuous Collector Current (A)
    46
  • Maximum Gate Emitter Leakage Current (uA)
    0.1
  • Maximum Power Dissipation (W)
    313
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Mounting
    Through Hole
  • Package Height
    21.1(Max)
  • Package Width
    5.16(Max)
  • Package Length
    16.03(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO-247
  • Supplier Package
    TO-247
  • Pin Count
    3
  • Lead Shape
    Through Hole
  • Family/Series
    SKW25N120
  • ALIAS
    SP000012571
  • Quantity Packaging
    240
  • ROHS Version
    2011/65/EU, 2015/863

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Documentation et ressources

Fiches techniques
Ressources de conception