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STMicroelectronics has the solution to your circuit's high-voltage requirements with their PNP 2STF2360 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

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STMicroelectronics2STF2360GP BJT

Trans GP BJT PNP 60V 3A 1400mW 4-Pin(3+Tab) SOT-89 T/R

STMicroelectronics has the solution to your circuit's high-voltage requirements with their PNP 2STF2360 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

A datasheet is only available for this product at this time.