Technical development and related solutions for hydrogen electrolyzer systems
Hydrogen electrolyzers are designed to produce hydrogen through the electrolysis of water using various energy sources (grid, solar, wind, or battery energy storage systems). When powered by renewable energy, these systems aim to generate hydrogen in an environmentally friendly manner, thereby reducing reliance on fossil fuels and minimizing carbon emissions. This article provides an overview of hydrogen electrolyzer applications and technology trends, and highlights the comprehensive and highly efficient power solutions tailored for this sector by onsemi.
Key technical aspects of hydrogen production via electrolysis and types of electrolysis technologies
Hydrogen produced via electrolysis can be utilized in various applications, including fuel cells for transportation, industrial processes, and energy storage. As renewable energy penetration increases, green hydrogen electrolyzer systems significantly contribute to the transition towards a sustainable, low-carbon energy infrastructure future. The industry is experiencing rapid growth due to several factors including technological advancements, integration with renewable energy, policy and investment support, and decentralized production.
Power conversion is a critical aspect of hydrogen electrolyzer systems, involving the transformation of electrical energy from power sources into the required form for electrolysis. Key components include rectifiers and DC-DC converters, which efficiently manage and convert electrical energy. Power module solutions integrate these components into cohesive systems, featuring modular designs for scalability, effective thermal management to dissipate heat, and sophisticated control systems for optimal performance and safety.
The electrolysis process is targeted to operate with stable and efficient DC power delivered through precise electrical conversion. This enables the electrolyzer to split water (H2O) into hydrogen (H2) and oxygen (O2), achieving zero carbon emissions and reducing operational expenditure/capital expenditure (OPEX/CAPEX) in power plants. The performance of power conversion directly impacts hydrogen production efficiency, system safety, and overall cost-effectiveness. The system typically consists of power modules, control units (for real-time voltage/current regulation), cooling systems, and protection circuits.
There are currently four primary electrolysis technologies: Alkaline, Proton Exchange Membrane (PEM), Solid Oxide Electrolysis Cell (SOEC), and Anion Exchange Membrane (AEM). Alkaline electrolysis is the most established and cost-effective, using a liquid electrolyte. PEM electrolysis employs a solid polymer membrane, offering high efficiency and fast dynamics. SOEC operates at high temperatures, achieving superior efficiency through both heat and electrical energy. AEM is a newer technology that combines the benefits of alkaline and PEM systems.
Multiple complete solutions available for hydrogen electrolyzer systems
onsemi offers several complete solutions for hydrogen electrolyzer systems, incorporating recommended products from onsemi. These solutions integrate onsemi's intelligent power and sensing technologies. Most functional module devices are included, covering power modules and discrete devices, gate drivers, as well as standard integrated circuits and signal products.
The QDual3 IGBT module is onsemi's High Power Integrated Module (PIM), which, in specific topologies, offers higher power density and up to 10% more output power than comparable products. The internally adopted FS7 IGBT technology delivers industry-leading efficiency, reducing costs and simplifying design. In megawatt-scale energy infrastructure systems, 3x QDual3 half-bridge modules are typically used to form a three-level topology. By paralleling multiple QDual3 modules, each system can output 1.2MW (using 18x QDual3 modules) or 1.8MW (using 27x QDual3 modules). Compared to traditional solutions using 600A modules, this approach reduces module quantity by 30%, significantly simplifying design and lowering system costs.
Key products include the Qdual3 IGBT Module – NXH800H120L7QDSG, which integrates FS7 IGBTs and Gen 7 diodes to provide lower conduction and switching losses, enabling designers to achieve high efficiency and superior reliability. It is a 1200V, 800A 2-in-1 Half Bridge IGBT PIM featuring an isolated base plate, NTC thermistor, solderable pins, low inductive layout, and packaged in the Qdual3 format.
Another product, the F5BP Hybrid PIM – NXH500B100H7F5SHG, is a dual-channel Flying Capacitor Boost module. Each channel contains two 1000V, 500A IGBTs and two 1200V, 120A SiC diodes. The F5BP PIM package offers superior thermal performance with a 9% lower thermal resistance compared to the F5-PIM package, supports 1500VDC systems, making it ideal for utility-scale applications. This product supports 1000V Field Stop 7 IGBTs and 1200V SiC diodes, features a low inductive layout, solder pins, an integrated NTC thermistor, and is a Pb-Free and Halide-Free device.
onsemi's Full SiC Power Modules include the M3S EliteSiC F1 and F2 Power Integrated Modules (PIMs), which offer significant advantages with superior thermal performance, high power density, and enhanced reliability. These PIMs are designed to deliver cost-effective and high-efficiency solutions for advanced energy infrastructures. Furthermore, these modules can be stacked to achieve power levels exceeding several hundred kilowatts.
The F2 Full Bridge PIM – NXH007F120M3F2PTHG is a 7 mΩ / 1200 V M3S SiC MOSFET Full-Bridge, utilizing an HPS DBC (Direct Bonded Copper) substrate, supports a 15V to 18V gate drive voltage, comes with pre-applied Thermal Interface Material (TIM), is easy to drive with negative gate voltages, and features press-fit pins. Another model, the F1 Half Bridge PIM – NXH008P120M3F1PTG, is an 8 mΩ / 1200 V M3S SiC MOSFET Half-Bridge, offers excellent FOM [ = RDS(on) * Eoss ], leverages M3S technology for optimized switching performance, supports a 15V to 18V gate drive voltage, is easy to drive with negative gate voltages, is available in options with or without pre-applied TIM, and features press-fit pins.
Silicon carbide solutions meeting the demands of energy infrastructure applications
onsemi is a premier long-term partner in the Silicon Carbide (SiC) domain, boasting a reliable end-to-end supply chain, deep application expertise, and a broad EliteSiC portfolio covering various market-specialized solutions. EliteSiC MOSFETs and the new SiC Cascode JFETs deliver best-in-class switching speed, ultra-low on-resistance (RDS(on)), and higher efficiency, meeting stringent system performance and reliability requirements for energy infrastructure applications.
The 650 - 1700 V Discrete SiC EliteSiC MOSFETs are designed for fast response and ruggedness, offering system benefits such as high efficiency, reduced system size, and lower cost. These products feature excellent FOM [ = RDS(on) * Eoss ], ultra-low gate charge, low capacitance enabling fast switching, superior performance with high power density, support for 15V to 18V gate drive voltage, 100% avalanche testing, a high operating junction temperature Tj= 175°C, and are available in sample packages including TO-247-3L/4L, D2PAK-7L, and Top cool SMD.
The SiC Cascode JFETs are high-speed JFETs for switch-mode power conversion, particularly well-suited for soft-switching converters with ultra-low on-resistance (RDS(ON)), supporting high pulse current. They feature a 2-chip co-packaged Cascode design, offer a pick-and-place replacement for standard normally-off MOSFETs, with on-resistance (RDS(on)) of 10mΩ for 1700V, ranging from 9mΩ to 410mΩ for 1200V, and from 5.4mΩ to 58mΩ for 750V. Target applications include power supplies, solar inverters, and DC-DC converters.
onsemi's newly optimized and innovative 1200V FS7 Discrete IGBTs are designed to significantly reduce both switching and conduction losses, ensuring superior switching performance. These devices feature low switching losses, enabling higher switching frequencies. This characteristic allows for a reduction in the size of magnetic components, thereby increasing power density and lowering system costs. FS7 IGBTs are an excellent choice for applications demanding efficient and cost-effective power solutions. The product utilizes a Trench Narrow Mesa design for low saturation voltage (Vce(sat)) and high-power density, and Proton Implant Multiple Buffer to enhance switching robustness and softness.
The 1200V, Field Stop VII (FS7) Discrete IGBT – FGY4L160T120SWD has a maximum junction temperature TJ = 175°C. It is a Gen7 diode co-packed in a TO-247-plus-4L package, features a positive temperature coefficient for easy parallel operation, offers high current capability with smooth and optimized switching characteristics, has low switching loss, is RoHS compliant, and targets applications such as energy infrastructure, EV chargers, solar inverters, UPS, and Energy Storage Systems (ESS).
Advanced gate drivers, current sense amplifiers, and operational amplifiers
onsemi's gate drivers empower hydrogen electrolyzer systems with high-efficiency, low-loss switching and robust isolation. Their support for SiC / Si / IGBT devices enables scalable, modular designs. Features like active Miller clamps, undervoltage lockout (UVLO), and high Common Mode Transient Immunity (CMTI) ensure safe and precise control even under demanding grid conditions. These capabilities make them essential for maximizing performance and reliability in green hydrogen production.
The NCP51563 is a Dual Channel Isolated Gate Driver, supporting 4.5A / 9A source/sink peak current, with a typical propagation delay of 36 ns and a maximum delay matching of 5ns. It offers single or dual input modes via the ANB pin, provides 5 kV galvanic isolation with CMTI ≥ 200 kV/µs, comes in an SOIC-16WB package with 8mm creepage distance.
Another gate driver, the NCP51752, is a Single Channel Isolated Gate Driver, supporting 4.5 A/9 A source/sink peak current and a 30V output swing. It has a propagation delay of 36 ns with a maximum delay matching of 5 ns, provides 3.75 kV galvanic isolation with CMTI ≥ 200 V/ns, is a single-channel device, integrates a negative bias generator to simplify driving and reduce system cost, and is packaged in SOIC-8.
onsemi's current sense amplifiers and operational amplifiers are crucial components for advancing energy infrastructure systems. They enable precise, real-time current monitoring, which is essential for safety, efficiency, and control. These amplifiers feature high common-mode voltage ranges and bidirectional sensing capabilities, making them ideal for both high-side and low-side current measurements in complex power conversion stages such as DC/DC converters and auxiliary power modules. In hydrogen electrolyzer systems, where accurate current feedback is critical for regulating electrochemical reactions and ensuring system stability, onsemi's zero-drift, low-offset amplifiers help maintain optimal performance while minimizing energy losses.
The Current Sense Amplifier NCS21673/4 offers gains of 20, 50, 100, and 200 V/V, capable of measuring voltage across shunts at common-mode voltages from -0.1V to 40V. They can operate from a single 2.7V to 5.5V power supply and are available in space-saving packages. Key features include low offset voltage of ±100 µV, low offset drift of max ±1 µV/°C, low gain error of max ±1%, low current consumption of max 300 µA per channel, and high bandwidth of 350 kHz with high slew rate.
The NCS21914 is a high-precision zero-drift operational amplifier featuring low input offset voltage and low offset drift over time and temperature. These devices exhibit low quiescent current and low noise performance, with a rail-to-rail output swing within 10 mV of the supply rails. Key specifications include a low offset voltage of max 25 µV, low offset drift of max 0.085 µV/°C, a supply voltage range of 4 to 36V, a quiescent current of max 570 µA, low noise of typically 22 nV/√Hz, a gain-bandwidth product of typically 2 MHz, rail-to-rail output, and integrated EMI filters.
Conclusion
Hydrogen electrolyzer systems are rapidly evolving towards higher efficiency, lower energy consumption, longer lifespan, and higher reliability, gradually becoming the core critical equipment within the green hydrogen industry chain. As technologies in materials, power electronics, system control, and digital monitoring continue to mature, electrolyzers have shown clear development paths for large-scale, modular, and intelligent applications. In the future, through the integration of efficient electrodes and membrane materials, advanced power and energy management solutions, and full lifecycle system solutions, onsemi’s hydrogen electrolyzer systems solutions will play a more strategic supporting role in renewable energy integration, energy structure transformation, and the achievement of carbon neutrality goals.
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