Nexperia NSF series silicon carbide MOSFETs
EVs are one of the “must-have” products today, and auto manufacturers are coming out with new models constantly to satiate demand. Perhaps more important than EVs, though, is the network of residential and public chargers they must depend on. In a charger, dependability, safety, and speed are vitally important, so the components in its circuit design must be chosen carefully. This article explores Nexperia’s Silicon Carbide MOSFETs, which feature excellent RDSon temperature stability, fast switching speeds and high short-circuit ruggedness.
For safe, robust and reliable power switching
Addressing the growing demand for high-power and high-voltage industrial applications, Nexperia’s Silicon Carbide MOSFETs, with their excellent RDSon temperature stability, fast switching speed, and high short-circuit ruggedness, make them the product of choice for E-vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Design benefits
Very low switching losses
Fast reverse recovery
Fast switching speed
Temperature-independent turn-off switching losses
Very fast and robust intrinsic body diode
Key applications
E-vehicle charging infrastructure
Photovoltaic inverters
Switch mode power supply
Uninterruptable power supply
Motor drives
Key technical features
Best-in-class RDSon temperature dependency
Superior gate charge and beneficial gate charge ratio
Low power consumption of gate drivers
High tolerance against parasitic turn-on
Ultra-small threshold voltage tolerance
Robust body diode with very low forward voltage
Lower leakage current up to 1200 V
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