Central Semiconductor2N2222A PBFREEGP BJT
Trans GP BJT NPN 40V 0.8A 500mW 3-Pin TO-18 Box
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Diameter | 5.84(Max) |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| 3 | |
| Lead Shape | Through Hole |
This NPN 2N2222A PBFREE general purpose bipolar junction transistor from Central Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V.
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