| RoHS (Unione Europea) | Supplier Unconfirmed |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Diameter | 9.4(Max) |
| Mounting | Through Hole |
| Package Height | 6.6(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-39 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
Design various electronic circuits with this versatile NPN 2N3019 GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V.
