| RoHS (Unione Europea) | Supplier Unconfirmed |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Channel Type | N |
| Configuration | Single |
| Maximum Gate Source Voltage (V) | 40 |
| Maximum Drain Gate Voltage (V) | 40 |
| Maximum Power Dissipation (mW) | 1800 |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Box |
| Minimum Drain Saturation Current (mA) | 25 |
| Diameter | 5.84(Max) |
| Mounting | Through Hole |
| Package Height | 5.33(Max) |
| PCB changed | 3 |
| Standard Package Name | TO |
| Supplier Package | TO-18 |
| Pin Count | 3 |
| Lead Shape | Through Hole |
Because of its uni-polar voltage control characteristics, the 2N4392 JFET transistor from Central Semiconductor is perfect for preventing a voltage drop in your circuit. Its maximum power dissipation is 1800 mW. It is made in a single configuration. This junction field effect transistor has a minimum operating temperature of -65 °C and a maximum of 175 °C.
