onsemi2N6387GDarlington BJT
Trans Darlington NPN 60V 10A 2000mW 3-Pin(3+Tab) TO-220AB Tube
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 60 | |
| 20000@5A@3V | |
| 60 | |
| 20(Min) | |
| 5 | |
| 10 | |
| 0.25 | |
| -65 to 150 | |
| 2@0.01A@5A|3@0.1A@10A | |
| 20(Min) | |
| 1000@5A@3V|100@10A@3V | |
| 2000 | |
| -65 | |
| 150 | |
| Tube | |
| <500|500 to 3600 | |
| Mounting | Through Hole |
| Package Height | 9.28(Max) mm |
| Package Width | 4.83(Max) mm |
| Package Length | 10.53(Max) mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-220AB |
| 3 | |
| Lead Shape | Through Hole |
Traditional transistors can produce low current gains. One of ON Semiconductor's NPN 2N6387G Darlington transistors can provide you with the much higher values you need. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 1000@5A@3 V|100@10A@3V. It has a maximum collector emitter saturation voltage of 2@0.01A@5A|3@0.1A@10A V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |