onsemi2SC3646T-TD-EGP BJT

Trans GP BJT NPN 100V 1A 1300mW 4-Pin(3+Tab) SOT-89 T/R

Implement this NPN 2SC3646T-TD-E GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 500 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 6 V.

383 pezzi: Spedisce tra 4 giorni

    Total$2.84Price for 5

    • Spedisce tra 4 giorni

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      Hong Kong
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      • In Stock: 383 pezzi
      • Price: $0.568