Taiwan SemiconductorBC846B RFGP BJT
Trans GP BJT NPN 65V 0.1A 200mW 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Bipolar Small Signal | |
| Single | |
| 1 | |
| 80 | |
| 65 | |
| 6 | |
| 1.1@5mA@100mA | |
| -55 to 150 | |
| 0.5@5mA@100mA | |
| 0.1 | |
| 100 | |
| 200@2mA@5V | |
| 200 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1.1(Max) |
| Package Width | 1.4(Max) |
| Package Length | 3(Max) |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Taiwan Semiconductor brings you the solution to your high-voltage BJT needs with their NPN BC846B RF general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 65 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
| EDA / CAD Models |