Infineon Technologies AGBC847AE6327HTSA1GP BJT

Trans GP BJT NPN 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the NPN BC847AE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

Import TariffMay apply to this part if shipping to the United States

43.884 pezzi: Spedisce tra 11 giorni

This item has been discontinued

    Total$0.15Price for 1

    • Spedisce tra 11 giorni

      Ships from:
      Stati Uniti d'America
      Date Code:
      1607+
      Manufacturer Lead Time:
      0 settimane
      Country Of origin:
      Cina
      • In Stock: 43.884 pezzi
      • Price: $0.1536