Infineon Technologies AG BC847PNH6327XTSA1 GP BJT
Trans GP BJT NPN/PNP 45V 0.1A 250mW Automotive AEC-Q101 6-Pin SOT-363 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| BC847PNH6327XTSA1 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Bipolar Small Signal | |
| Si | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 6 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 150 | |
| 0.3@0.5mA@10mA|0.65@5mA@100mA | |
| 0.1 | |
| 150 | |
| 200@2mA@5V | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the npn and PNP BC847PNH6327XTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 250 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
| EDA / CAD Models |
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BC847PNH6327XTSA1 Infineon Technologies AG