Diodes IncorporatedBC857BV-7GP BJT
Trans GP BJT PNP 45V 0.1A 150mW 6-Pin SOT-563 T/R
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| PNP | |
| Bipolar Small Signal | |
| Dual | |
| 2 | |
| 50 | |
| 45 | |
| 5 | |
| 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA | |
| 0.1@0.5mA@10mA|0.4@5mA@100mA | |
| 0.1 | |
| 220@2mA@5V | |
| 150 | |
| 100(Min) | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.6(Max) |
| Package Width | 1.2 |
| Package Length | 1.6 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-563 |
| 6 | |
| Lead Shape | Flat |
Compared to other transistors, the PNP BC857BV-7 general purpose bipolar junction transistor, developed by Diodes Zetex, can offer a high-voltage solution in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V.
| EDA / CAD Models |