Infineon Technologies AGBCR135E6327HTSA1BJT digitale

Trans Digital BJT NPN 50V 0.1mA 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101

Compared to traditional BJ transistors, the NPN BCR135E6327HTSA1 digital transistor from Infineon Technologies is meant to be used with digital signal processing circuits. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It is made in a single configuration. This transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

33.000 pezzi: Spedisce tra 3 giorni

    Total$138.30Price for 3000

    • (3000)

      Spedisce tra 3 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2417+
      Manufacturer Lead Time:
      4 settimane
      Country Of origin:
      Cina
      • In Stock: 33.000 pezzi
      • Price: $0.0461