Infineon Technologies AGBCR196E6327HTSA1BJT digitale
Trans Digital BJT PNP 50V 0.07A 200mW 3-Pin SOT-23 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.75 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Single | |
| 50 | |
| 70 | |
| 50@5mA@5V | |
| 150 | |
| 47 | |
| 0.3@0.5mA@10mA | |
| 2.14 | |
| 200 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this PNP BCR196E6327HTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 70 mA, while its minimum DC current gain is 50@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 200 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a single configuration.
| EDA / CAD Models |