Infineon Technologies AGBCW68FE6327HTSA1GP BJT
Trans GP BJT PNP 45V 0.8A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| PNP | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 60 | |
| 45 | |
| 5 | |
| 1.25@10mA@100mA|2@50mA@500mA | |
| 0.3@10mA@100mA|0.7@50mA@500mA | |
| 0.8 | |
| 100@100mA@1V|35@100uA@10V|35@500mA@2V|75@10mA@1V | |
| 330 | |
| 200(Typ) | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Thanks to Infineon Technologies, your circuit can handle high levels of voltage using the PNP BCW68FE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 2 V. Its maximum power dissipation is 330 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 2 V.
| EDA / CAD Models |