RoHS (Unione Europea) | Compliant |
ECCN (Stati Uniti) | EAR99 |
Stato del componente | Unconfirmed |
Codice HTS | 8541.29.00.75 |
Automotive | Unknown |
PPAP | Unknown |
Material | GaN |
Configuration | Single |
Type | JFET |
Channel Mode | Depletion |
Channel Type | N |
Number of Elements per Chip | 1 |
Mode of Operation | Pulsed RF |
Process Technology | HEMT |
Maximum Drain Source Voltage (V) | 150 |
Maximum Gate Source Voltage (V) | 3 |
Maximum Gate Threshold Voltage (V) | 1.3 |
Maximum VSWR | 10 |
Typical Forward Transconductance (S) | 4 |
Output Power (W) | 100 |
Typical Power Gain (dB) | 12 |
Maximum Frequency (MHz) | 3500 |
Minimum Frequency (MHz) | 0 |
Typical Fall Time (ns) | 5 |
Typical Rise Time (ns) | 5 |
Typical Drain Efficiency (%) | 53 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 250 |
Packaging | Bulk |
Mounting | Screw |
Package Height | 4.67(Max) |
Package Width | 5.97(Max) |
Package Length | 20.45(Max) |
PCB changed | 3 |
Supplier Package | SOT-467C |
Pin Count | 3 |