| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | No |
| PPAP | No |
| Material | Si |
| Configuration | Dual Common Source |
| Number of Elements per Chip | 2 |
| Process Technology | DMOS |
| Maximum Drain Source Voltage (V) | 70 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 7 |
| Maximum VSWR | 20(Min) |
| Maximum Gate Source Leakage Current (nA) | 1000 |
| Maximum IDSS (uA) | 6000 |
| Typical Input Capacitance @ Vds (pF) | 360(Max)@28V |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 15(Max)@28V |
| Typical Output Capacitance @ Vds (pF) | 180(Max)@28V |
| Typical Forward Transconductance (S) | 0.0048(Min) |
| Maximum Power Dissipation (mW) | 875000 |
| Typical Power Gain (dB) | 16(Min) |
| Maximum Frequency (MHz) | 400 |
| Minimum Frequency (MHz) | 1 |
| Typical Drain Efficiency (%) | 60(Min) |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Mounting | Screw |
| Package Height | 4.45 |
| Package Width | 10.16 |
| Package Length | 34.04 |
| PCB changed | 5 |
| Supplier Package | Case D1 |
| Pin Count | 5 |
