Diodes IncorporatedDMMT5551-7-FGP BJT

Trans GP BJT NPN 160V 0.2A 300mW 6-Pin SOT-26 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DMMT5551-7-F GP BJT from Diodes Zetex. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

33.000 pezzi: Spedisce tra 3 giorni

    Total$249.30Price for 3000

    • (3000)

      Spedisce tra 3 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2452+
      Manufacturer Lead Time:
      12 settimane
      Country Of origin:
      Cina
      • In Stock: 33.000 pezzi
      • Price: $0.0831