onsemiDTA114YET1GBJT digitale

Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R

Are you designing a digital processing circuit and are looking to apply the characteristics of traditional BJT's within? Look no further than the PNP DTA114YET1G digital transistor from ON Semiconductor. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 300 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -55 °C to 150 °C. It is made in a single configuration.

54.000 pezzi: Spedisce tra 2 giorni

    Total$92.70Price for 3000

    • (3000)

      Spedisce tra 2 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2447+
      Manufacturer Lead Time:
      8 settimane
      Country Of origin:
      Cina
      • In Stock: 54.000 pezzi
      • Price: $0.0309