| Compliant | |
| Obsolete | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
The IXGT16N170AH1 IGBT transistor from Ixys Corporation will work effectively even with higher currents. It has a maximum collector emitter voltage of 1700 V. Its maximum power dissipation is 190000 mW. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
| EDA / CAD Models |