| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| Automotive | Unknown |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 1.5(Max) |
| Package Width | 3.9 |
| Package Length | 4.9 |
| PCB changed | 8 |
| Standard Package Name | SO |
| Supplier Package | SOIC |
| Pin Count | 8 |
| Lead Shape | Gull-wing |
As an alternative to traditional transistors, the MDS5951URH power MOSFET from MagnaChip Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 2000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device utilizes tmos technology. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
