onsemiMJB41CT4GGP BJT

Trans GP BJT NPN 100V 6A 2000mW 3-Pin(2+Tab) D2PAK T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN MJB41CT4G GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

800 pezzi: Spedisce tra 2 giorni

    Total$535.84Price for 800

    • (800)

      Spedisce tra 2 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2438+
      Manufacturer Lead Time:
      12 settimane
      Country Of origin:
      Cina
      • In Stock: 800 pezzi
      • Price: $0.6698