| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | LTB |
| Codice HTS | 8541.29.00.95 |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) mm |
| Package Width | 6.22(Max) mm |
| Package Length | 6.73(Max) mm |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
This NPN MJD200G general purpose bipolar junction transistor from ON Semiconductor is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor's maximum emitter base voltage is 8 V. Its maximum power dissipation is 1400 mW. This product comes in rail packaging to keep individual parts separated and protected. It has a maximum collector emitter voltage of 25 V and a maximum emitter base voltage of 8 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
