onsemiMMBT5401LT1GGP BJT

Trans GP BJT PNP 150V 0.5A 300mW 3-Pin SOT-23 T/R

Look no further than ON Semiconductor's PNP MMBT5401LT1G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 5 V.

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      Date Code:
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      Cina
         
      • Price: $0.1544
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Spedizione in giornata

      Ships from:
      Stati Uniti d'America
      Date Code:
      2322+
      Manufacturer Lead Time:
      10 settimane
      Country Of origin:
      Cina
      • In Stock: 11.791 pezzi
      • Price: $0.1544
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      Spedizione in giornata

      Increment:
      3000
      Ships from:
      Stati Uniti d'America
      Date Code:
      2425+
      Manufacturer Lead Time:
      10 settimane
      Country Of origin:
      Cina
      • In Stock: 939.000 pezzi
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