onsemiMMBT6429LT1GGP BJT

Trans GP BJT NPN 45V 0.2A 300mW 3-Pin SOT-23 T/R

Implement this NPN MMBT6429LT1G GP BJT from ON Semiconductor to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V.

15.000 pezzi: Spedisce tra 2 giorni

    Total$0.02Price for 1

    • Spedisce tra 2 giorni

      Ships from:
      Paesi Bassi
      Date Code:
      2210+
      Manufacturer Lead Time:
      30 settimane
      Country Of origin:
      Cina
      • In Stock: 15.000 pezzi
      • Price: $0.0232