onsemi MMBTA13LT1G Darlington BJT
Trans Darlington NPN 30V 0.3A 300mW 3-Pin SOT-23 T/R
Specifiche tecniche del prodotto
| Compliant | |
| EAR99 | |
| Active | |
| 8541.21.00.75 | |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 30 | |
| 30 | |
| 10 | |
| 0.3 | |
| 0.1 | |
| 1.5@0.1mA@100mA | |
| 125(Min) | |
| 10000@100mA@5V|5000@10mA@5V | |
| 300 | |
| -55 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.94 |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
If you require a higher current gain value in your circuit, then the NPN MMBTA13LT1G Darlington transistor, developed by ON Semiconductor, is for you. This Darlington transistor array's maximum emitter base voltage is 10 V. This product's maximum continuous DC collector current is 0.3 A, while its minimum DC current gain is 10000@100mA@5 V|5000@10mA@5V. It has a maximum collector emitter saturation voltage of 1.5@0.1mA@100mA V. Its maximum power dissipation is 300 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This Darlington transistor array has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 10 V.
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