| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 1.57 mm |
| Package Width | 3.5 mm |
| Package Length | 6.5 mm |
| PCB changed | 3 |
| Tab | Tab |
| Standard Package Name | SOT |
| Supplier Package | SOT-223 |
| Pin Count | 4 |
| Lead Shape | Gull-wing |
The PNP MMJT350T1G general purpose bipolar junction transistor, developed by ON Semiconductor, is the perfect solution for your high-current density needs. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1400 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 300 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
