onsemiNJVNJD35N04T4GDarlington BJT
Trans Darlington NPN 350V 4A 45000mW Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | Yes |
| PPAP | Yes |
| Mounting | Surface Mount |
| Package Height | 2.38(Max) |
| Package Width | 6.22(Max) |
| Package Length | 6.73(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-252 |
| Supplier Package | DPAK |
| 3 | |
| Lead Shape | Gull-wing |
Compared to other transistors, the NPN NJVNJD35N04T4G Darlington transistor from ON Semiconductor can provide you with a higher current gain value. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 2@20mA@2A V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 2000@2A@2 V|300@4A@2V. It has a maximum collector emitter saturation voltage of 1.5@20mA@2A V. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C.
| EDA / CAD Models |