| RoHS (Unione Europea) | Compliant |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.21.00.95 |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.75(Max) mm |
| Package Width | 2 mm |
| Package Length | 2 mm |
| PCB changed | 3 |
| Standard Package Name | DFN |
| Supplier Package | WDFN EP |
| Pin Count | 3 |
| Lead Shape | No Lead |
The versatility of this PNP NSS12100UW3TCG GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 1100 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 12 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
