onsemiNSS20201LT1GGP BJT

Trans GP BJT NPN 20V 2A 540mW 3-Pin SOT-23 T/R

Look no further than ON Semiconductor's NPN NSS20201LT1G general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 540 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 20 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

Import TariffMay apply to this part

6.000 pezzi: Spedisce domani

    Total$306.90Price for 3000

    • (3000)

      Spedisce domani

      Ships from:
      Stati Uniti d'America
      Date Code:
      2416+
      Manufacturer Lead Time:
      13 settimane
      Country Of origin:
      Cina
      • In Stock: 6.000 pezzi
      • Price: $0.1023