Infineon Technologies AG SMBT2222AE6327HTSA1 GP BJT
Trans GP BJT NPN 40V 0.6A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Specifiche tecniche del prodotto
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN | |
| Bipolar Small Signal | |
| Si | |
| Single | |
| 1 | |
| 75 | |
| 40 | |
| 6 | |
| 1.2@15mA@150mA|2@50mA@500mA | |
| 150 | |
| 0.3@15mA@150mA|1@50mA@500mA | |
| 0.6 | |
| 10 | |
| 100@150mA@10V|35@100uA@10V|40@500mA@10V|50@150mA@1V|50@1mA@10V|75@10mA@10V | |
| 330 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Automotive | |
| Mounting | Surface Mount |
| Package Height | 1(Max) |
| Package Width | 1.3 |
| Package Length | 2.9 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| 3 | |
| Lead Shape | Gull-wing |
Infineon Technologies has the solution to your circuit's high-voltage requirements with their NPN SMBT2222AE6327HTSA1 general purpose bipolar junction transistor. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.
Simboli e Footprint
| EDA / CAD Models |
|
SMBT2222AE6327HTSA1 Infineon Technologies AG