| RoHS (Unione Europea) | Compliant with Exemption |
| ECCN (Stati Uniti) | EAR99 |
| Stato del componente | Active |
| Codice HTS | 8541.29.00.95 |
| SVHC | Yes |
| Tasso di SVHC superiore ai limiti consentiti | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 4.6(Max) |
| Package Width | 9.35(Max) |
| Package Length | 10.4(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| Pin Count | 3 |
| Lead Shape | Gull-wing |
Make an effective common gate amplifier using this STB42N60M2-EP power MOSFET from STMicroelectronics. Its maximum power dissipation is 250000 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh m2 technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
