Central Semiconductor2N6294 TIN/LEADDarlington BJT
Trans Darlington NPN 60V 4A 50000mW 3-Pin(2+Tab) TO-66 Sleeve
| Not Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| NPN | |
| Single | |
| 1 | |
| 60 | |
| 60 | |
| 5 | |
| 4@40mA@4A | |
| 4 | |
| 2@8mA@2A|3@40mA@4A | |
| 4(Min) | |
| 100@4A@3V|750@2A@3V | |
| 50000 | |
| -65 | |
| 200 | |
| Sleeve | |
| Mounting | Through Hole |
| Package Height | 8.64(Max) |
| Package Width | 17.52 |
| Package Length | 24.48(Max) + 7.16 |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO |
| Supplier Package | TO-66 |
| 3 | |
| Lead Shape | Through Hole |
The NPN 2N6294 TIN/LEAD Darlington transistor from Central Semiconductor is the perfect solution when amplified current gain values are needed. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 100@4A@3 V|750@2A@3V. It has a maximum collector emitter saturation voltage of 2@8mA@2A|3@40mA@4A V. This Darlington transistor array's maximum emitter base voltage is 5 V, while its maximum base emitter saturation voltage is 4@40mA@4A V. Its maximum power dissipation is 50000 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -65 °C to 200 °C.
| EDA / CAD Models |