onsemi2SA2205-TL-EGP BJT

Trans GP BJT PNP 100V 2A 800mW 3-Pin(2+Tab) DPAK T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile PNP 2SA2205-TL-E GP BJT from ON Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 800 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 7 V.

201 parts: Ships in 3 days

This item has been discontinued

    Total$0.16Price for 1

    • Ships in 3 days

      Ships from:
      Netherlands
      Date Code:
      1750+
      Manufacturer Lead Time:
      0 weeks
      Country Of origin:
      China
      • In Stock: 201 parts
      • Price: $0.162