Toshiba2SC2712-Y(TE85L,F)GP BJT
Trans GP BJT NPN 50V 0.15A 150mW 3-Pin S-Mini T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| Mounting | Surface Mount |
| Package Height | 1.1 mm |
| Package Width | 1.5 mm |
| Package Length | 2.9 mm |
| PCB changed | 3 |
| Standard Package Name | S-MINI |
| Supplier Package | S-Mini |
| 3 | |
| Lead Shape | Gull-wing |
Implement this NPN 2SC2712YTE85LF GP BJT from Toshiba to add switching and amplifying capabilities to your electronic circuit design. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 150 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. It has a maximum collector emitter voltage of 50 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 125 °C.
| EDA / CAD Models |