| EU RoHS | Supplier Unconfirmed |
| ECCN (US) | 3A001a.2.c. |
| Part Status | Unconfirmed |
| HTS | EA |
| Automotive | Unknown |
| PPAP | Unknown |
| Type | Module |
| Phototransistor Type | Phototransistor |
| Lens Shape Type | Domed |
| Material | Silicon |
| Number of Channels per Chip | 1 |
| Polarity | NPN |
| Half Intensity Angle Degrees (°) | 24 |
| Viewing Orientation | Top View |
| Maximum Rise Time (ns) | 20000 |
| Maximum Fall Time (ns) | 20000 |
| Maximum Light Current (uA) | 12000 |
| Maximum Dark Current (nA) | 25 |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Maximum Collector-Emitter Voltage (V) | 50 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.3 |
| Maximum Power Dissipation (mW) | 50 |
| Fabrication Technology | NPN Transistor |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Diameter | 1.55(Max) |
| Mounting | Through Hole |
| Package Height | 2.92(Max) |
| PCB changed | 2 |
| Pin Count | 2 |
