Infineon Technologies AGBC817K16E6327HTSA1GP BJT

Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Implement this versatile NPN BC817K16E6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.

12,000 parts: Ships today

    Total$109.80Price for 3000

    • (3000)

      Ships today

      Ships from:
      United States of America
      Date Code:
      2327+
      Manufacturer Lead Time:
      4 weeks
      Country Of origin:
      Austria
      • In Stock: 12,000 parts
      • Price: $0.0366