Infineon Technologies AGBC817K16E6327HTSA1GP BJT
Trans GP BJT NPN 45V 0.5A 500mW Automotive AEC-Q101 3-Pin SOT-23 T/R
Compliant | |
EAR99 | |
LTB | |
8541.21.00.75 | |
Automotive | Yes |
PPAP | Unknown |
Mounting | Surface Mount |
Package Height | 1(Max) |
Package Width | 1.3 |
Package Length | 2.9 |
PCB changed | 3 |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
3 | |
Lead Shape | Gull-wing |
Implement this versatile NPN BC817K16E6327HTSA1 GP BJT from Infineon Technologies into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.