Infineon Technologies AGBC817K40WH6327XTSA1GP BJT

Trans GP BJT NPN 45V 0.5A 250mW Automotive AEC-Q101 3-Pin SOT-323 T/R

This specially engineered NPN BC817K40WH6327XTSA1 GP BJT from Infineon Technologies comes with a variety of characteristics including absolute maximum ratings, thermal characteristics, and DC and AC electrical characteristics. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 250 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

282,000 parts: Ships in 2 days

    Total$140.70Price for 3000

    • (3000)

      Ships in 2 days

      Ships from:
      Netherlands
      Date Code:
      2315+
      Manufacturer Lead Time:
      98 weeks
      Country Of origin:
      China
      • In Stock: 282,000 parts
      • Price: $0.0469