Infineon Technologies AGBC847CE6327HTSA1GP BJT

Trans GP BJT NPN 45V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN BC847CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 6 V. Its maximum power dissipation is 330 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It has a maximum collector emitter voltage of 45 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.

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Total In Stock: 145,054 parts

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      Date Code:
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