Infineon Technologies AGBC858CE6327HTSA1GP BJT

Trans GP BJT PNP 30V 0.1A 330mW Automotive AEC-Q101 3-Pin SOT-23 T/R

Jump-start your electronic circuit design with this versatile PNP BC858CE6327HTSA1 GP BJT from Infineon Technologies. This bipolar junction transistor's maximum emitter base voltage is 5 V. Its maximum power dissipation is 330 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 30 V and a maximum emitter base voltage of 5 V.

36,000 parts: Ships today

    Total$103.50Price for 3000

    • (3000)

      Ships today

      Ships from:
      United States of America
      Date Code:
      1642+
      Manufacturer Lead Time:
      4 weeks
      Country Of origin:
      China
      • In Stock: 36,000 parts
      • Price: $0.0345