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Infineon Technologies AGBCR08PNH6327XTSA1Digital BJT - Pre-Biased
Trans Digital BJT NPN/PNP 50V 0.1A 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
| Compliant | |
| EAR99 | |
| LTB | |
| 8541.21.00.95 | |
| Automotive | Yes |
| PPAP | Unknown |
| NPN|PNP | |
| Dual | |
| 50 | |
| 100 | |
| 70@5mA@5V | |
| 170 | |
| 2.2 | |
| 0.3@0.5mA@10mA | |
| 0.047 | |
| 250 | |
| -65 | |
| 150 | |
| Tape and Reel | |
| Mounting | Surface Mount |
| Package Height | 0.9(Max) |
| Package Width | 1.25 |
| Package Length | 2 |
| PCB changed | 6 |
| Standard Package Name | SOT |
| Supplier Package | SOT-363 |
| 6 | |
| Lead Shape | Gull-wing |
Apply the applications of a traditional bi polar junction transistor, in digital circuits with this npn and PNP BCR08PNH6327XTSA1 digital transistor from Infineon Technologies, ideal for any digital signal processing circuit! This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. Its maximum power dissipation is 250 mW. It has a maximum collector emitter voltage of 50 V. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This transistor has an operating temperature range of -65 °C to 150 °C. It is made in a dual configuration.
| EDA / CAD Models |