Infineon Technologies AGBCR08PNH6433XTMA1Digital BJT - Pre-Biased
Trans Digital BJT NPN/PNP 50V 0.1mA 250mW 6-Pin SOT-363 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
LTB | |
8541.29.00.95 | |
Automotive | Yes |
PPAP | Unknown |
Mounting | Surface Mount |
Package Height | 0.9(Max) |
Package Width | 1.25 |
Package Length | 2 |
PCB changed | 6 |
Standard Package Name | SOT |
Supplier Package | SOT-363 |
6 | |
Lead Shape | Gull-wing |
Are you in need of the digital form of a traditional bipolar junction transistor? The npn and PNP BCR08PNH6433XTMA1 digital transistor from Infineon Technologies is what you've been looking for. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 70@5mA@5 V. It has a maximum collector emitter saturation voltage of 0.3@0.5mA@10mA V. It has a maximum collector emitter voltage of 50 V. Its maximum power dissipation is 250 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. It is made in a dual configuration. This transistor has an operating temperature range of -65 °C to 150 °C.