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onsemiBD681GDarlington BJT
Trans Darlington NPN 100V 4A 40000mW 3-Pin(3+Tab) TO-225 Box
Compliant with Exemption | |
EAR99 | |
Active | |
8541.29.00.95 | |
SVHC | Yes |
Automotive | No |
PPAP | No |
Mounting | Through Hole |
Package Height | 11.1(Max) |
Package Width | 3(Max) |
Package Length | 7.8(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-225 |
3 | |
Lead Shape | Through Hole |
This NPN BD681G Darlington transistor from ON Semiconductor amplifies your current and yields a much higher current gain than other transistors. This Darlington transistor array's maximum emitter base voltage is 5 V. This product's maximum continuous DC collector current is 4 A, while its minimum DC current gain is 750@1.5A@3 V. It has a maximum collector emitter saturation voltage of 2.5@30mA@1.5A V. Its maximum power dissipation is 40000 mW. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V. This Darlington transistor array has an operating temperature range of -55 °C to 150 °C.