Infineon Technologies AGBFP650H6327XTSA1RF BJT
Trans RF BJT NPN 4V 0.15A 500mW 4-Pin SOT-343 T/R Automotive AEC-Q101
Compliant | |
EAR99 | |
Active | |
8541.21.00.75 | |
Automotive | Yes |
PPAP | Unknown |
NPN | |
SiGe | |
Single Dual Emitter | |
1 | |
13 | |
4 | |
<20 | |
1.2 | |
0.15 | |
0.12 to 0.5 | |
500 | |
40 | |
3V/70mA | |
100@70mA@3V | |
50 to 120 | |
1.3 | |
0.26 | |
500 | |
17(Typ) | |
38 | |
31(Typ) | |
42000(Typ) | |
1.6(Typ) | |
-55 | |
150 | |
Automotive | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 0.9(Max) |
Package Width | 1.25 |
Package Length | 2 |
PCB changed | 4 |
Standard Package Name | SOT |
Supplier Package | SOT-343 |
4 | |
Lead Shape | Gull-wing |
Look no further than the BFP650H6327XTSA1 RF bi-polar junction transistor, developed by Infineon Technologies, which can offer high radio frequency power compatibility. This RF transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.