onsemiBUB323ZT4GDarlington BJT
Trans Darlington NPN 350V 10A 150000mW 3-Pin(2+Tab) D2PAK T/R
| Compliant with Exemption | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| SVHC | Yes |
| SVHC Exceeds Threshold | Yes |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 4.83(Max) |
| Package Width | 9.65(Max) |
| Package Length | 10.29(Max) |
| PCB changed | 2 |
| Tab | Tab |
| Standard Package Name | TO-263 |
| Supplier Package | D2PAK |
| 3 | |
| Lead Shape | Gull-wing |
ON Semiconductor's NPN BUB323ZT4G Darlington transistor is the ideal component to use in situations where a higher current gain is needed. This Darlington transistor array's maximum emitter base voltage is 6 V, while its maximum base emitter saturation voltage is 2.2@100mA@8A|2.5@0.25A@10A V. This product's maximum continuous DC collector current is 10 A, while its minimum DC current gain is 500@5A@4.6 V. It has a maximum collector emitter saturation voltage of 1.6@70mA@7A|1.8@0.1A@8A|1.7@0.25A@10A V. Its maximum power dissipation is 150000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This Darlington transistor array has an operating temperature range of -65 °C to 175 °C. It has a maximum collector emitter voltage of 350 V and a maximum emitter base voltage of 6 V.
| EDA / CAD Models |