STMicroelectronicsBUL138GP BJT
Trans GP BJT NPN 400V 5A 80000mW 3-Pin(3+Tab) TO-220AB Tube
Compliant with Exemption | |
EAR99 | |
Obsolete | |
EA | |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Single | |
1 | |
800 | |
400 | |
9 | |
1.1@0.2A@1A|1.3@0.4A@2A|1.5@0.6A@3A | |
0.5@0.2A@1A|0.7@0.4A@2A|1@0.6A@3A|1@1A@4A | |
5 | |
10@10mA@5V|8@2A@5V | |
80000 | |
-65 | |
150 | |
Tube | |
Industrial | |
Mounting | Through Hole |
Package Height | 9.15(Max) |
Package Width | 4.6(Max) |
Package Length | 10.4(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | TO |
Supplier Package | TO-220AB |
3 | |
Lead Shape | Through Hole |
Add switching and amplifying capabilities to your electronic circuit with this NPN BUL138 GP BJT from STMicroelectronics. This bipolar junction transistor's maximum emitter base voltage is 9 V. Its maximum power dissipation is 80000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V.
EDA / CAD Models |