Central SemiconductorCZT3019 TR PBFREEGP BJT
Trans GP BJT NPN 80V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R
Compliant | |
EAR99 | |
LTB | |
8541.29.00.75 | |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
NPN | |
Bipolar Power | |
Si | |
Single Dual Collector | |
1 | |
140 | |
80 | |
7 | |
1.1@15mA@150mA | |
0.2@15mA@150mA|0.5@50mA@500mA | |
1 | |
50@0.1mA@10V|90@10mA@10V|100@150mA@10V|50@500mA@10V|15@1A@10V | |
2000 | |
-65 | |
150 | |
Tape and Reel | |
Mounting | Surface Mount |
Package Height | 1.7(Max) |
Package Width | 3.7(Max) |
Package Length | 6.85(Max) |
PCB changed | 3 |
Tab | Tab |
Standard Package Name | SOT |
Supplier Package | SOT-223 |
4 |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN CZT3019 TR PBFREE GP BJT from Central Semiconductor. This bipolar junction transistor's maximum emitter base voltage is 7 V. Its maximum power dissipation is 2000 mW. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C.