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onsemi DTA115EET1G Digital BJT - Pre-Biased
Trans Digital BJT PNP 50V 0.1A 300mW 3-Pin SOT-416 T/R
Product Technical Specifications
| Compliant | |
| EAR99 | |
| Active | |
| 8541.29.00.95 | |
| Automotive | No |
| PPAP | No |
| Mounting | Surface Mount |
| Package Height | 0.75 |
| Package Width | 0.8 |
| Package Length | 1.6 |
| PCB changed | 3 |
| Standard Package Name | SOT |
| Supplier Package | SOT-416 |
| 3 | |
| Lead Shape | Gull-wing |
Look no further than ON Semiconductor's PNP DTA115EET1G digital transistor, which can provide a solution to your digital signal processing needs. This product's maximum continuous DC collector current is 100 mA, while its minimum DC current gain is 80@5mA@10 V. It has a maximum collector emitter saturation voltage of 0.25@0.3mA@10mA V. Its maximum power dissipation is 300 mW. It has a maximum collector emitter voltage of 50 V. Tape and reel packaging will encase the product during shipment, ensuring safe delivery and enabling quick mounting of components. This transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It is made in a single configuration.
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